| PART |
Description |
Maker |
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| 1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor
|
GHz Technology
|
| 1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor
|
GHz Technology
|
| 1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor
|
GHz Technology
|
| 1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor
|
GHz Technology
|
| 1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
LEM
|
| NTE916 |
Integrated Circuit High Current, NPN Transistor Array, Common Emitter
|
NTE[NTE Electronics]
|
| UTV005 |
COMMON EMITTER transistor 0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V
|
GHZTECH[GHz Technology]
|
| AT-33225-BLK AT-33225-TR1 AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones
4.8 V NPN Common Emitter Output Power Transistor for AMPS ETACS Phones
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| 10A015 |
1.5 W, 20 V, 1000 MHz common emitter transistor
1.5 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHZTECH[GHz Technology]
|
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
